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8878
FDS8878N-Channel PowerTrench® MOSFETVDS=30VID=10.2A @ VGS=10VID=9.3A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
SKU: ZZ10.FIC034
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4807
AO4807 30V Dual P-Channel MOSFETVDS=-30VID=-6A @ VGS=10VThe AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
SKU: ZZ10.FIC031
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6676AS
FDS6676AS 6676AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=14.5A @ VGS=10VThe FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
SKU: ZZ10.FIC030
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4810
4810 SI4810 4810DN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET Product SummaryVDS=30VID=10A @ VGS=10VID=8A @ VGS=4.5VShottky Product SummaryVDS=30VIF=4A
SKU: ZZ10.FIC029
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4456
AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
SKU: ZZ10.FIC028
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4422
AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allowa Kelvin connection to the source, which may beused to bypass the source inductance.
SKU: ZZ10.FIC027
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4466
AO4466 30V N-Channel MOSFETVDS=30VID=10A@ VGS=10VThe AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
SKU: ZZ10.FIC026
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6690
FDS6690AS 6690AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=10A @ VGS=10VThe FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance...
SKU: ZZ10.FIC024
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8880
N-Channel PowerTrench® MOSFET FDS8880VDS=30VID=11.6A @ VGS=10VID=10.7A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
SKU: ZZ10.FIC023
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7904
IRF7904PbF HEXFET Power MOSFETMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=7.6A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=11A @ VGS=10V
SKU: ZZ10.FIC022
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6900
Dual N-Ch PowerTrench® SyncFET™ 6900ASMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=6.9A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=8.2A @ VGS=10VThe FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two...
SKU: ZZ10.FIC021
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4800
AO4800B 4800B30V Dual N-Channel MOSFETVDS=30VID=6.9A @ VGS=10VThe AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
SKU: ZZ10.FIC020
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8884
N-Channel PowerTrench MOSFET FDS8884VDS=30VID=8.5A @ VGS=10VID=7.5A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
SKU: ZZ10.FIC019
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4502
N-ChannelVDS=30VID=10A @ VGS=10VP-ChannelVDS=-30VID=-8.5A @ VGS=-10VThese miniature mount MOSFETs utilize High Cell Density process. Lw Rds(on) assures minimal power loss and conserves energy, making this device idel for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
SKU: ZZ10.FIC018
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4606
30V Complementary MOSFETN-ChannelVDS=30VID=6A @ VGS=10VP-ChannelVDS=-30VID=-6.5A @ VGS=-10VThe AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
SKU: ZZ10.FIC017
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4496
AO4496N-Channel D-S MOSFETVDS=30VID=10A @ VGS=10VThe AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application.
SKU: ZZ10.FIC015
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4812
30V Dual N-Channel MOSFETVDS=30VID=6A @ VGS=10VThe AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
SKU: ZZ10.FIC014
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4468
AO446830V N-Channel MOSFETVDS=30VID=10.5A @ VGS=10VThe AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
SKU: ZZ10.FIC013
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4435
VDS=-30VID=-10.5A @ VGS=-20VThe AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
SKU: ZZ10.FIC012
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4932
FET1(N-Channel)VDS=30VID=11A (VGS=10V)FET2(N-Channel)VDS=30VID=8AThe AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further.
SKU: ZZ10.FIC010
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4511
SI4511 N- and P-Channel 20-V (D-S)N-Channel VDS=20V, ID=9.6AP-Channel VDS=-20V, ID=-6.2A
SKU: ZZ10.FIC009
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4835B
4835P-Channel 30-V (D-S) MOSFETVDS=-30VID=-9.6A @ VGS=-10VID=-7.5A @ VGS=-4.5V
SKU: ZZ10.FIC008
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4856
N-ChannelVDS=30VID=17A @ VGS=10VID=14A @ VGS=4.5VRDS(on)=0.006ΩRDS(on)=0.0085Ω
SKU: ZZ10.FIC006
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4488
N-Channel7.9A30VRds(on) = 22 mΩ @ Vgs = 10VRds(on) = 30 mΩ @ Vgs = 4.5VThe 4488 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications.
SKU: ZZ10.FIC005
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4710
VDS (V) = 30VID =12.7A (VGS = 10V)RDS(ON) έως 11.8mΩ (VGS = 10V)RDS(ON) έως 14.2mΩ (VGS = 4.5V)SRFET TM The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
SKU: ZZ10.FIC004
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4935A
Dual 30V P-Channel PowerTrench MOSFET –7 A, –30 V4935A AO4935A RDS(ON) = 23 mΩ @ VGS = –10 VRDS(ON) = 35 mΩ @ VGS = –4.5 VThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applicationsrequiring a wide range of gave drive voltage ratings (4.5V – 20V).
SKU: ZZ10.FIC002
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