Καλωδιοταινία οθόνης για Acer 5738 Type B
LED 40 PIN5738PG 5738PZG 5738 5338 5538Acer Aspire 5738 5738G 5738Z 5738ZG 5738DG 5236 5338 5536 5536G 5542 5542G 50.4CG13.0015338 5542 5542G 5536 5738 5738G 5738Z 5738Zg50.4CG15.001
SKU: ZZ10.FL049
Καλωδιοταινία οθόνης για Toshiba L455
CCFL 30 PINA350 A350D A355 A355D L450L455 L450 A350 A355 L455 L455D L450 L450D
SKU: ZZ10.FL048
Καλωδιοταινία οθόνης για Acer E5-511 (Μακρυά) Type Α
LED 30 PIN32,5CM (Βύσμα Οθόνης-Βύσμα Μητρικής)E5-531 E5-571 V3-572 E5-511 E5-411 E5-471DC02001Y910
SKU: ZZ10.FL047
Καλωδιοταινία οθόνης για DELL Inspiron 3542
LED 30 PINDell Inspiron 15 3542 15-3000 15 3000450.00H01.0001450.00H01.0041 450.00h01.00113541 3543
SKU: ZZ10.FL042
Καλωδιοταινία οθόνης για HP 15-J
LED 40 PIN6017B0416401HP Envy TouchSmart 15 15-J15-J 15-J000 15-J084nr
SKU: ZZ10.FL041
Καλωδιοταινία οθόνης για HP 2000
LED 40 PIN 2000-2b19WM 2000-2b20CA255 G1 250 G1 HP 2000-2d24DX6017B0373701
SKU: ZZ10.FL040
Καλωδιοταινία οθόνης για Sony VAIO VPC-F1 FL038
CCFL 30 PINVPCF1 015-0001-1497_A101004 REV:APCG 81115L VPC F M930VPC-F
SKU: ZZ10.FL038
7692
FDMS7692 N-Channel PowerTrench® MOSFET30 V, 7.5 mΩVDS = 30VID = 13A, Max rDS(on) = 7.5mΩ at VGS = 10VID = 10A, Max rDS(on) = 13mΩ at VGS = 4.5V Advanced Package and Silicon combination for low rDS(on) and high efficiencyThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventionalswitching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and...
SKU: ZZ10.FIC077
7686
Si7686DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 35A @ VGS = 10V, RDS(on) = 9.5mΩID = 35A @ VGS = 4.5V, RDS(on) = 14mΩ
SKU: ZZ10.FIC073
7636
Si7636DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 28A @ VGS = 10V, RDS(on) = 4mΩID = 28A @ VGS = 4.5V, RDS(on) = 4.8mΩ
SKU: ZZ10.FIC072
389
RJK0389DPA, K0389Silicon Dual N Channel Power MOS FET with Schottky Barrier DiodeHigh Speed Power SwitchingMOSFET1VDS = 30VID = 15A @ VGS = 10VMOSFET2VDS = 30VID = 20A @ VGS = 10V
SKU: ZZ10.FIC068
6679AZ
FDS6679AZP-Channel PowerTrench® MOSFET -30V, -13A, 9mΩVDS = -30VID = -13A @ VGS = -10V, RDS(on) = 9.3mΩID = -11A @ VGS = -4.5V, RDS(on) = 14.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
SKU: ZZ10.FIC066
4459A
Si4459ADYP-Channel 30-V (D-S) MOSFETVDS = -30VID = -29A @ VGS = -10V, RDS(on) έως 5mΩID = -23A @ VGS = -4.5V, RDS(on) έως 7.75mΩ
SKU: ZZ10.FIC064
85T03GH
AP85T03GH/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET TO-252 PackageVDS = 30VID = 75A @ VGS = 10V, RDS(on) = 6mΩThe TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GJ) is available for low-profile applications.
SKU: ZZ10.FIC062
85U03GH
AP85U03GHN-Channel Enhancement Mode Power MOSFET. Package : TO-252(H) Type30V, 75AVDS=30VID=75A @ VGS=10V
SKU: ZZ10.FIC061
4914
Si4914BDYDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeChannel-1VDS = 30VID = 8.4A @ VGS = 10V, RDS(on) = 21mΩID = 7.4A @ VGS = 4.5V, RDS(on) = 27mΩChannel-2VDS = 30VID = 8A @ VGS = 10V, RDS(on) = 20mΩID = 8A @ VGS = 4.5V, RDS(on) = 25mΩShottky Product SummaryVDS = 30VIF = 2AVSD = 0.5V @ 1A
SKU: ZZ10.FIC060
4825P
AF4825PP-Channel 30-V (D-S) MOSFETVDS = -30VID = -11.5A @ VGS = 10V, RDS(on) = 13mΩID = 9.3A @ VGS = 4.5V, RDS(on) = 19mΩThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones...
SKU: ZZ10.FIC059
7836
IRF7836PbF N-Channel HEXFET Power MOSFET F7836VDS = 30VID = 17A @ VGS = 10V, RDS(on) = 5.7mΩ
SKU: ZZ10.FIC058
4232
4232BGM, AP4232BGM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETVDS = 30VID = 7.6A @ VGS = 10V, RDS(on) = 22mΩAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
SKU: ZZ10.FIC057
6675
FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩVDS = -30VID = -11A @ VGS = -10V, RDS(on) = 13mΩID = -9A @ VGS = -4.5V, RDS(on) = 21.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
SKU: ZZ10.FIC055
4N60
4N60 Power MOSFET4A, 600V N-CHANNEL POWER MOSFETVDS = 600VID = 2.2A @ VGS = 10V, RDS(on) έως 2.5ΩThe UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
SKU: ZZ10.FIC051
Si7904DN
Si7904DN 7904 Si7904 7904DNDual N-Channel 20-V (D-S) MOSFETPowerPack 1212-8 VDS=20VID=7.7A @ VGS=4.5VID=7.0A @ VGS=2.5VID=6.3A @ VGS=1.8V
SKU: ZZ10.FIC045