AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allowa Kelvin connection to the source, which may beused to bypass the source inductance.
